NP80N055PDG-E1B-AY

Renesas Electronics Corporation

Product No:

NP80N055PDG-E1B-AY

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Package:

TO-263

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Description:

MOSFET N-CH 55V 80A TO263

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In Stock : 5000

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Operating Temperature	175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	6.6mOhm @ 40A, 10V
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	55 V
Series	-
Power Dissipation (Max)	1.8W (Ta), 115W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Renesas Electronics America Inc
Package	Bulk