NP60N06VDK-E1-AY

Renesas Electronics Corporation

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NP60N06VDK-E1-AY

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Package:

TO-252 (MP-3ZP)

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Description:

P-TRS2 AUTOMOTIVE MOS

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7.9mOhm @ 30A, 10V
Supplier Device Package	TO-252 (MP-3ZP)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	1.2W (Ta), 105W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Renesas Electronics America Inc
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NP60N06