NDS355AN-F169
detaildesc

NDS355AN-F169

Fairchild Semiconductor

Product No:

NDS355AN-F169

Package:

SOT-23-3

Batch:

-

Datasheet:

-

Description:

N-CHANNEL LOGIC LEVEL ENHANCEMEN

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 85mOhm @ 1.9A, 10V
Supplier Device Package SOT-23-3
Vgs(th) (Max) @ Id 2V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 500mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk