NDB6030L
detaildesc

NDB6030L

Fairchild Semiconductor

Product No:

NDB6030L

Package:

TO-263AB

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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In Stock : 580

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 175

    $1.634

    $285.95

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Product Information

Parameter Info

User Guide

Operating Temperature -65°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 13.5mOhm @ 26A, 10V
Supplier Device Package TO-263AB
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 75W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk