ISL9N318AD3ST
detaildesc

ISL9N318AD3ST

Fairchild Semiconductor

Product No:

ISL9N318AD3ST

Package:

TO-263AB

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 7500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 701

    $0.4085

    $286.3585

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 18mOhm @ 30A, 10V
Supplier Device Package TO-263AB
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series UltraFET®
Power Dissipation (Max) 55W (Ta)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk