ISL9N2357D3ST
detaildesc

ISL9N2357D3ST

Fairchild Semiconductor

Product No:

ISL9N2357D3ST

Package:

TO-252-3 (DPAK)

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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In Stock : 87500

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 272

    $1.045

    $284.24

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 20 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 7mOhm @ 35A, 10V
Supplier Device Package TO-252-3 (DPAK)
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series UltraFET®
Power Dissipation (Max) 100W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk