IRL8113PBF
detaildesc

IRL8113PBF

onsemi

Product No:

IRL8113PBF

Manufacturer:

onsemi

Package:

TO-220AB

Batch:

-

Datasheet:

-

Description:

HEXFET POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 6mOhm @ 21A, 10V
Supplier Device Package TO-220AB
Vgs(th) (Max) @ Id 2.25V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series HEXFET®
Power Dissipation (Max) 110W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 105A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk