IRFD213
detaildesc

IRFD213

Harris Corporation

Product No:

IRFD213

Manufacturer:

Harris Corporation

Package:

4-HVMDIP

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 250V 450MA 4DIP

Quantity:

Delivery:

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Payment:

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In Stock : 5563

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 468

    $0.608

    $284.544

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 2Ohm @ 270mA, 10V
Supplier Device Package 4-HVMDIP
Vgs(th) (Max) @ Id 4V @ 250µA
Drain to Source Voltage (Vdss) 250 V
Series -
Power Dissipation (Max) -
Package / Case 4-DIP (0.300", 7.62mm)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 450mA (Ta)
Mfr Harris Corporation
Package Tube