IRFD123
Harris Corporation
Product No:
IRFD123
Manufacturer:
Package:
4-HVMDIP
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 100V 1.3A 4DIP
Quantity:
Delivery:
Payment:
In Stock : 40377
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
346
$0.8265
$285.969
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 780mA, 10V |
| Supplier Device Package | 4-HVMDIP |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | - |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
| Mfr | Harris Corporation |
| Package | Tube |
IRFD123 Related Blog
Purchase must see! Electronic component selection from entry to give up
2024-10-24 27
Basic knowledge of crystal vibration, circuit design, non-vibration reasons, circuit principle, crystal frequency, digital circuit application (crystal vibration data download)
2024-04-08 87
Order transfer! A 30-year old Hong Kong-owned PCB factory in Shenzhen was sold
2024-02-22 33
New product release | Daoheshun infrared methane sensor, guarding the "last pass" of gas safety
2024-02-22 20
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
CopyRight © 道合顺 2013 - 2022 粤ICP备18104022号 粤公网安备 44030402004525号