IRF9Z30PBF

Vishay Siliconix

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IRF9Z30PBF

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Package:

TO-220AB

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Description:

MOSFET P-CH 50V 18A TO220AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	140mOhm @ 9.3A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	50 V
Series	-
Power Dissipation (Max)	74W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRF9Z30