HUF76113T3ST
detaildesc

HUF76113T3ST

Fairchild Semiconductor

Product No:

HUF76113T3ST

Package:

SOT-223-4

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 34318

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 544

    $0.5225

    $284.24

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 625 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20.5 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 31mOhm @ 4.7A, 10V
Supplier Device Package SOT-223-4
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 1.1W (Ta)
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.7A (Ta)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk