GT52N10T

Goford Semiconductor

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GT52N10T

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TO-220

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Description:

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Supplier Device Package	TO-220
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	227W
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tube