GAN140-650FBEZ

Nexperia USA Inc.

Product No:

GAN140-650FBEZ

Manufacturer:

Package:

DFN5060-5

Batch:

Datasheet:

Description:

650 V, 140 MOHM GALLIUM NITRIDE

Quantity:

Delivery:

Payment:

In Stock : 2442

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.5 nC @ 6 V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	140mOhm @ 5A, 6V
Supplier Device Package	DFN5060-5
Vgs(th) (Max) @ Id	2.5V @ 17.2mA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	113W (Ta)
Package / Case	8-PowerVDFN
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	17A (Ta)
Mfr	Nexperia USA Inc.
Vgs (Max)	+7V, -1.4V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)
Base Product Number	GAN140