G7K2N20HE

Goford Semiconductor

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G7K2N20HE

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SOT-223

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Description:

N200V, ESD,2A,RD<0.7@10V,VTH1V~2

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	568 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	700mOhm @ 1A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	1.8W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)