G30N03D3

Goford Semiconductor

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G30N03D3

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Package:

8-DFN (3.15x3.05)

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Description:

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	825 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7mOhm @ 20A, 10V
Supplier Device Package	8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	24W
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tape & Reel (TR)