G2312

Goford Semiconductor

Product No:

G2312

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Package:

SOT-23

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Description:

N20V,RD(MAX)<18M@10V,RD(MAX)<20M

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	780 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 4.2A, 10V
Supplier Device Package	SOT-23
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.25W
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Package	Tape & Reel (TR)