G20P06K

Goford Semiconductor

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G20P06K

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TO-252

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P-60V, -20A,RD<45M@-10V,VTH-2V~-

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	3430 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	45mOhm @ 12A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	3.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	90W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)