G11S

Goford Semiconductor

Product No:

G11S

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Package:

8-SOP

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Description:

P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2455 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18.4mOhm @ 1A, 4.5V
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	1.1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	G
Power Dissipation (Max)	3.3W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Mfr	Goford Semiconductor
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)