G06N06S

Goford Semiconductor

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G06N06S

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8-SOP

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N60V,RD(MAX)<22M@10V,RD(MAX)<35M

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	22mOhm @ 6A, 10V
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	2.4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	2.1W
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tape & Reel (TR)