FQU9N25TU
detaildesc

FQU9N25TU

Fairchild Semiconductor

Product No:

FQU9N25TU

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 6099

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 538

    $0.532

    $286.216

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 420mOhm @ 3.7A, 10V
Supplier Device Package I-PAK
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 250 V
Series QFET®
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk