FQT7N10LTF
Fairchild Semiconductor
Product No:
FQT7N10LTF
Manufacturer:
Package:
SOT-223-4
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 850mA, 10V |
| Supplier Device Package | SOT-223-4 |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | QFET® |
| Power Dissipation (Max) | 2W (Tc) |
| Package / Case | TO-261-4, TO-261AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Mfr | Fairchild Semiconductor |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Package | Bulk |
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