EPC2010C

EPC

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EPC2010C

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Die

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Description:

GANFET N-CH 200V 22A DIE OUTLINE

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	25mOhm @ 12A, 5V
Supplier Device Package	Die
Vgs(th) (Max) @ Id	2.5V @ 3mA
Drain to Source Voltage (Vdss)	200 V
Series	eGaN®
Power Dissipation (Max)	-
Package / Case	Die
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	22A (Ta)
Mfr	EPC
Vgs (Max)	+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Tape & Reel (TR)
Base Product Number	EPC20