5N20A

Goford Semiconductor

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5N20A

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TO-252 (DPAK)

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Description:

N200V,RD(MAX)<650M@10V,VTH1V~3V,

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Operating Temperature	-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds	255 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	650mOhm @ 2.5A, 10V
Supplier Device Package	TO-252 (DPAK)
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	78W
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A
Mfr	Goford Semiconductor
Vgs (Max)	±20V
Package	Tape & Reel (TR)