2SK2009TE85LF

Toshiba Semiconductor and Storage

Product No:

2SK2009TE85LF

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Package:

SC-59-3

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Description:

MOSFET N-CH 30V 200MA SC59-3

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	70 pF @ 3 V
FET Type	N-Channel
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2Ohm @ 50MA, 2.5V
Supplier Device Package	SC-59-3
Vgs(th) (Max) @ Id	1.5V @ 100µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	200mW (Ta)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V
Package	Tape & Reel (TR)
Base Product Number	2SK2009