SUD50P04-08-GE3

Vishay Siliconix

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SUD50P04-08-GE3

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TO-252AA

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Description:

MOSFET P-CH 40V 50A TO252

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En stock : 8864

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5380 pF @ 20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	159 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.1mOhm @ 22A, 10V
Supplier Device Package	TO-252AA
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	40 V
Series	TrenchFET®
Power Dissipation (Max)	2.5W (Ta), 73.5W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SUD50