IPDH4N03LAG

Infineon Technologies

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IPDH4N03LAG

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Forfait:

PG-TO252-3-11

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Description:

MOSFET N-CH 25V 90A TO252-3

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En stock : 2390

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	4.2mOhm @ 60A, 10V
Supplier Device Package	PG-TO252-3-11
Vgs(th) (Max) @ Id	2V @ 40µA
Drain to Source Voltage (Vdss)	25 V
Series	OptiMOS™
Power Dissipation (Max)	94W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPDH4