WND10P08YQ
detaildesc

WND10P08YQ

WeEn Semiconductors

Producto No:

WND10P08YQ

Paquete:

IITO-220-2

Lote:

-

Ficha de datos:

pdf

Descripción:

DIODE GP 800V 10A IITO220-2

Cantidad:

Entrega:

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Pago:

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En stock : 5998

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $0.8835

    $0.8835

  • 10

    $0.7258

    $7.258

  • 100

    $0.564205

    $56.4205

  • 500

    $0.478211

    $239.1055

  • 1000

    $0.389557

    $389.557

  • 2000

    $0.366719

    $733.438

  • 5000

    $0.349258

    $1746.29

  • 10000

    $0.333136

    $3331.36

¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

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Información del producto

Parámetro Info

Guía del usuario

Speed Standard Recovery >500ns, > 200mA (Io)
Capacitance @ Vr, F -
Mounting Type Through Hole
Product Status Active
Supplier Device Package IITO-220-2
Current - Reverse Leakage @ Vr 10 µA @ 800 V
Series -
Package / Case TO-220-2
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 10 A
Mfr WeEn Semiconductors
Voltage - DC Reverse (Vr) (Max) 800 V
Package Tube
Current - Average Rectified (Io) 10A
Operating Temperature - Junction 150°C
Base Product Number WND10