TSM4NB60CI

Taiwan Semiconductor Corporation

Producto No:

TSM4NB60CI

Fabricante:

Paquete:

ITO-220

Lote:

Ficha de datos:

Descripción:

600V, 4A, SINGLE N-CHANNEL POWER

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.5Ohm @ 2A, 10V
Supplier Device Package	ITO-220
Vgs(th) (Max) @ Id	4.5V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	25W (Tc)
Package / Case	TO-220-3 Full Pack, Isolated Tab
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Taiwan Semiconductor Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM4