TPD3215M
detaildesc

TPD3215M

Transphorm

Producto No:

TPD3215M

Fabricante:

Transphorm

Paquete:

Module

Lote:

-

Ficha de datos:

-

Descripción:

GANFET 2N-CH 600V 70A MODULE

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 8V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 34mOhm @ 30A, 8V
Supplier Device Package Module
Vgs(th) (Max) @ Id -
Drain to Source Voltage (Vdss) 600V
Series -
Package / Case Module
Technology GaNFET (Gallium Nitride)
Power - Max 470W
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Transphorm
Package Bulk
Base Product Number TPD3215