STFI11N60M2-EP
detaildesc

STFI11N60M2-EP

STMicroelectronics

Producto No:

STFI11N60M2-EP

Fabricante:

STMicroelectronics

Paquete:

I2PAKFP (TO-281)

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 600V I2PAK-FP

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 595mOhm @ 3.75A, 10V
Supplier Device Package I2PAKFP (TO-281)
Vgs(th) (Max) @ Id 4.75V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series MDmesh™
Power Dissipation (Max) 25W (Tc)
Package / Case TO-262-3 Full Pack, I²Pak
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STFI11N