STD4NK60Z-1

STMicroelectronics

Producto No:

STD4NK60Z-1

Fabricante:

Paquete:

I-PAK

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 600V 4A IPAK

Cantidad:

Entrega:

Pago:

En stock : 35

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	2Ohm @ 2A, 10V
Supplier Device Package	I-PAK
Vgs(th) (Max) @ Id	4.5V @ 50µA
Drain to Source Voltage (Vdss)	600 V
Series	SuperMESH™
Power Dissipation (Max)	70W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STD4NK60