STB18N60M6
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STB18N60M6

STMicroelectronics

Producto No:

STB18N60M6

Fabricante:

STMicroelectronics

Paquete:

D²PAK (TO-263)

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 600V 13A D2PAK

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V
Supplier Device Package D²PAK (TO-263)
Vgs(th) (Max) @ Id 4.75V @ 250µA
Drain to Source Voltage (Vdss) 600 V
Series MDmesh™ M6
Power Dissipation (Max) 110W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB18