SI6562CDQ-T1-BE3

Vishay Siliconix

Producto No:

SI6562CDQ-T1-BE3

Fabricante:

Paquete:

8-TSSOP

Lote:

Ficha de datos:

Descripción:

N- AND P-CHANNEL 20-V (D-S) MOSF

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Pago:

En stock : 703

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V, 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V, 51nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
Supplier Device Package	8-TSSOP
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	20V
Series	TrenchFET®
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
Current - Continuous Drain (Id) @ 25°C	5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
Mfr	Vishay Siliconix
Package	Tape & Reel (TR)
Base Product Number	SI6562