SI3909DV-T1-GE3
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SI3909DV-T1-GE3

Vishay Siliconix

Producto No:

SI3909DV-T1-GE3

Fabricante:

Vishay Siliconix

Paquete:

6-TSOP

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET 2P-CH 20V 6TSOP

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 200mOhm @ 1.8A, 4.5V
Supplier Device Package 6-TSOP
Vgs(th) (Max) @ Id 500mV @ 250µA (Min)
Drain to Source Voltage (Vdss) 20V
Series TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Power - Max 1.15W
Current - Continuous Drain (Id) @ 25°C -
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SI3909