SCTH40N120G2V-7

STMicroelectronics

Producto No:

SCTH40N120G2V-7

Fabricante:

Paquete:

H2PAK-7

Lote:

Ficha de datos:

Descripción:

SILICON CARBIDE POWER MOSFET 120

Cantidad:

Entrega:

Pago:

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1233 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
Supplier Device Package	H2PAK-7
Vgs(th) (Max) @ Id	4.9V @ 1mA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	238W (Tc)
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Mfr	STMicroelectronics
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	SCTH40