RS6P060BHTB1

Rohm Semiconductor

Producto No:

RS6P060BHTB1

Fabricante:

Paquete:

8-HSOP

Lote:

Ficha de datos:

Descripción:

NCH 100V 60A, HSOP8, POWER MOSFE

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En stock : 2350

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10.6mOhm @ 60A, 10V
Supplier Device Package	8-HSOP
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	-
Power Dissipation (Max)	3W (Ta), 73W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	RS6P060