RN1966FE(TE85L,F)
Toshiba Semiconductor and Storage
Producto No:
RN1966FE(TE85L,F)
Fabricante:
Paquete:
ES6
Lote:
-
Ficha de datos:
Descripción:
TRANS 2NPN PREBIAS 0.1W ES6
Cantidad:
Entrega:
Pago:
En stock : 4000
Mínimo: 1 Múltiplos: 1
Qty
Precio unitario
Precio Ext
1
$0.361
$0.361
10
$0.2508
$2.508
100
$0.122455
$12.2455
500
$0.102125
$51.0625
1000
$0.070956
$70.956
2000
$0.061494
$122.988
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Información del producto
Parámetro Info
Guía del usuario
| Frequency - Transition | 250MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Resistor - Base (R1) | 4.7kOhms |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | ES6 |
| Series | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Package / Case | SOT-563, SOT-666 |
| Power - Max | 100mW |
| Mfr | Toshiba Semiconductor and Storage |
| Resistor - Emitter Base (R2) | 47kOhms |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Base Product Number | RN1966 |
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2000+Volumen de RFQ promedio diario
30,000,000Unidad de producto estándar
2800+Fabricantes mundiales
15,000 ㎡Almacén en stock
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