RN1313,LF
Toshiba Semiconductor and Storage
Producto No:
RN1313,LF
Fabricante:
Paquete:
USM
Lote:
-
Ficha de datos:
-
Descripción:
PB-F BIAS RESISTOR BUILT-IN TRAN
Cantidad:
Entrega:
Pago:
En stock : 3000
Mínimo: 1 Múltiplos: 1
Qty
Precio unitario
Precio Ext
1
$0.1615
$0.1615
10
$0.1178
$1.178
100
$0.063365
$6.3365
500
$0.049742
$24.871
1000
$0.034542
$34.542
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Información del producto
Parámetro Info
Guía del usuario
| Frequency - Transition | 250 MHz |
| Current - Collector (Ic) (Max) | 100 mA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Resistor - Base (R1) | 47 kOhms |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Supplier Device Package | USM |
| Series | Automotive, AEC-Q101 |
| Transistor Type | NPN - Pre-Biased |
| Package / Case | SC-70, SOT-323 |
| Power - Max | 100 mW |
| Mfr | Toshiba Semiconductor and Storage |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Base Product Number | RN1313 |
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2000+Volumen de RFQ promedio diario
30,000,000Unidad de producto estándar
2800+Fabricantes mundiales
15,000 ㎡Almacén en stock
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