R6007ENX

Rohm Semiconductor

Producto No:

R6007ENX

Fabricante:

Paquete:

TO-220FM

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 600V 7A TO220FM

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En stock : 131

Mínimo: 1 Múltiplos: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	620mOhm @ 2.4A, 10V
Supplier Device Package	TO-220FM
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	600 V
Series	-
Power Dissipation (Max)	40W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Mfr	Rohm Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	R6007