PMZB950UPELYL
detaildesc

PMZB950UPELYL

NXP Semiconductors

Producto No:

PMZB950UPELYL

Fabricante:

NXP Semiconductors

Paquete:

DFN1006B-3

Lote:

-

Ficha de datos:

pdf

Descripción:

NEXPERIA PMZB950UPEL - 20 V, P-C

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 4.5V
Supplier Device Package DFN1006B-3
Vgs(th) (Max) @ Id 950mV @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series -
Power Dissipation (Max) 360mW (Ta)
Package / Case 3-XFDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Mfr NXP Semiconductors
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Package Bulk