Hogar / 单 FET,MOSFET / PJQ5450_R2_00001
PJQ5450_R2_00001
detaildesc

PJQ5450_R2_00001

Panjit International Inc.

Producto No:

PJQ5450_R2_00001

Paquete:

DFN5060-8

Lote:

-

Ficha de datos:

pdf

Descripción:

40V N-CHANNEL ENHANCEMENT MODE M

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Not For New Designs
Rds On (Max) @ Id, Vgs 32mOhm @ 12A, 10V
Supplier Device Package DFN5060-8
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series -
Power Dissipation (Max) 2W (Ta), 25W (Tc)
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta), 21A (Tc)
Mfr Panjit International Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJQ5450