Hogar / 单 FET,MOSFET / PJQ4465AP-AU_R2_000A1
PJQ4465AP-AU_R2_000A1
detaildesc

PJQ4465AP-AU_R2_000A1

Panjit International Inc.

Producto No:

PJQ4465AP-AU_R2_000A1

Paquete:

DFN3333-8

Lote:

-

Ficha de datos:

pdf

Descripción:

60V P-CHANNEL ENHANCEMENT MODE M

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : 1834

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

  • 1

    $0.5605

    $0.5605

  • 10

    $0.4864

    $4.864

  • 100

    $0.336775

    $33.6775

  • 500

    $0.281409

    $140.7045

  • 1000

    $0.239495

    $239.495

  • 2000

    $0.213304

    $426.608

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1256 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 48mOhm @ 5A, 10V
Supplier Device Package DFN3333-8
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 2W (Ta), 20W (Tc)
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5A (Ta), 15A (Tc)
Mfr Panjit International Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJQ4465