PJD9P06A-AU_L2_000A1

Panjit International Inc.

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Paquete:

TO-252

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Descripción:

60V P-CHANNEL ENHANCEMENT MODE M

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En stock : 2606

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 30 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	170mOhm @ 3.5A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	2W (Ta), 15.6W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta), 7A (Tc)
Mfr	Panjit International Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PJD9