PJD25N03_L2_00001

Panjit International Inc.

Producto No:

PJD25N03_L2_00001

Fabricante:

Paquete:

TO-252

Lote:

Ficha de datos:

Descripción:

30V N-CHANNEL ENHANCEMENT MODE M

Cantidad:

Entrega:

Pago:

En stock : 8141

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	392 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	25mOhm @ 12A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	2W (Ta), 25W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Ta), 25A (Tc)
Mfr	Panjit International Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	PJD25