Hogar / Single FETs, MOSFETs / PJD16N06A-AU_L2_000A1
PJD16N06A-AU_L2_000A1
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PJD16N06A-AU_L2_000A1

Panjit International Inc.

Producto No:

PJD16N06A-AU_L2_000A1

Paquete:

TO-252

Lote:

-

Ficha de datos:

pdf

Descripción:

60V N-CHANNEL ENHANCEMENT MODE M

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 815 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 50mOhm @ 8A, 10V
Supplier Device Package TO-252
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Series Automotive, AEC-Q101
Power Dissipation (Max) 2.4W (Ta), 32.6W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.4A (Ta), 16A (Tc)
Mfr Panjit International Inc.
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJD16