Hogar / IGBT 模块 / NXH350N100H4Q2F2P1G-R
NXH350N100H4Q2F2P1G-R
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NXH350N100H4Q2F2P1G-R

onsemi

Producto No:

NXH350N100H4Q2F2P1G-R

Fabricante:

onsemi

Paquete:

42-PIM/Q2PACK (93x47)

Lote:

-

Ficha de datos:

pdf

Descripción:

GEN1.5 1500V MASS MARKET

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 175°C (TJ)
NTC Thermistor Yes
Configuration Three Level Inverter
Current - Collector (Ic) (Max) 303 A
Input Capacitance (Cies) @ Vce 24.146 nF @ 20 V
Mounting Type Chassis Mount
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1000 V
Supplier Device Package 42-PIM/Q2PACK (93x47)
Series -
Input Standard
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 375A
Package / Case Module
Power - Max 592 W
Mfr onsemi
Current - Collector Cutoff (Max) 1 mA
Package Tray
IGBT Type Trench Field Stop
Base Product Number NXH350