Hogar / 单 FET,MOSFET / NVMFWS003P03P8ZT1G
NVMFWS003P03P8ZT1G
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NVMFWS003P03P8ZT1G

onsemi

Producto No:

NVMFWS003P03P8ZT1G

Fabricante:

onsemi

Paquete:

5-DFNW (4.9x5.9) (8-SOFL-WF)

Lote:

-

Ficha de datos:

pdf

Descripción:

PFET SO8FL -30V 3MO

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 12120 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 4.5 V
Mounting Type Surface Mount, Wettable Flank
Product Status Active
Rds On (Max) @ Id, Vgs 1.8mOhm @ 23A, 10V
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id 3V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 3.9W (Ta), 168.7W (Tc)
Package / Case 8-PowerTDFN, 5 Leads
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 35.7A (Ta), 234A (Tc)
Mfr onsemi
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)