NTD4815N-1G
detaildesc

NTD4815N-1G

onsemi

Producto No:

NTD4815N-1G

Fabricante:

onsemi

Paquete:

I-PAK

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 30V 6.9A/35A IPAK

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : Por favor investigación

Por favor envíe RFQ, responderemos inmediatamente.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 770 pF @ 12 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 4.5 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 15mOhm @ 30A, 10V
Supplier Device Package I-PAK
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 1.26W (Ta), 32.6W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.9A (Ta), 35A (Tc)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Package Tube
Base Product Number NTD48