NTBG028N170M1
detaildesc

NTBG028N170M1

onsemi

Producto No:

NTBG028N170M1

Fabricante:

onsemi

Paquete:

D2PAK-7

Lote:

-

Ficha de datos:

pdf

Descripción:

SIC MOSFET 1700 V 28 MOHM M1 SER

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4160 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 222 nC @ 20 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 40mOhm @ 60A, 20V
Supplier Device Package D2PAK-7
Vgs(th) (Max) @ Id 4.3V @ 20mA
Drain to Source Voltage (Vdss) 1700 V
Series -
Power Dissipation (Max) 428W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C 71A (Tc)
Mfr onsemi
Vgs (Max) +25V, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tape & Reel (TR)
Base Product Number NTBG028