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NDS356AP-NB8L005A
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NDS356AP-NB8L005A

onsemi

Producto No:

NDS356AP-NB8L005A

Fabricante:

onsemi

Paquete:

SOT-23-3

Lote:

-

Ficha de datos:

pdf

Descripción:

-30V P-CHANNEL LOGIC LEVEL ENHAN

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 10V
Supplier Device Package SOT-23-3
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series -
Power Dissipation (Max) 500mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk